ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV
SOT-23
FDC6420C Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
70MOhm
Terminal Finish
TIN (SN)
Subcategory
Other Transistors
Max Power Dissipation
700mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
3A
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
960mW
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
70m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
324pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3A 2.2A
Gate Charge (Qg) (Max) @ Vgs
4.6nC @ 4.5V
Rise Time
12ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
12 ns
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
3A
Threshold Voltage
900mV
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
3A
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Nominal Vgs
900 mV
Height
900μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:10496 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDC6420C Product Details
The ON SEMICONDUCTOR FDC6420C is a dual MOSFET array that provides high performance and reliability in a small package. This device features N and P channel MOSFETs with a maximum current rating of 3A, a maximum voltage rating of 20V, and a low on-resistance of 0.05 ohms. The FDC6420C also features a low gate threshold voltage of 4.5V and a low gate-source voltage of 900mV. This device is ideal for applications such as power management, motor control, and switching applications. The FDC6420C is available in a small, surface mount package, making it ideal for space-constrained applications.
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