ZXTN2010GTA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at 6A to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 130MHz.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 6A volts at its maximum.
ZXTN2010GTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZXTN2010GTA Applications
There are a lot of Diodes Incorporated ZXTN2010GTA applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
