MPS6601 Overview
DC current gain in this device equals 50 @ 500mA 1V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at 4V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).A transition frequency of 100MHz is present in the part.During maximum operation, collector current can be as low as 1A volts.
MPS6601 Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz
MPS6601 Applications
There are a lot of ON Semiconductor MPS6601 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
