2N5401 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5401 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
1996
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
-150V
Max Power Dissipation
625mW
Current Rating
-600mA
Base Part Number
2N5401
Polarity
PNP
Element Configuration
Single
Power Dissipation
625mW
Power - Max
625mW
Gain Bandwidth Product
400MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
600mA
Max Frequency
300MHz
Collector Emitter Saturation Voltage
500mV
Frequency - Transition
300MHz
Collector Base Voltage (VCBO)
-160V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
Height
5.33mm
Length
5.2mm
Width
4.19mm
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
In-Stock:71139 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.12000
$0.12
500
$0.1188
$59.4
1000
$0.1176
$117.6
1500
$0.1164
$174.6
2000
$0.1152
$230.4
2500
$0.114
$285
2N5401 Product Details
2N5401 Description
2N5401 is intended for use in high-voltage situations where the load consumes very little power (i.e. Current drawn by load is low). Telephone networks contain these types of circuits. It can also be utilized for high voltage loads when you need a simple switching device. The component is very inexpensive and simple to use.
2N5401 Features
Pb-free packaging is available.
Collector breakdown voltage is high.
Up to 100 times DC Current Gain (hFE)
150V maximum voltage between collector and emitter
Trough collector maximum current allowed: 600mA
160 V maximum voltage between collector and base
5V maximum voltage between base and emitter
-55°C to +150°C operating temperature range
0.62 W maximum power dissipation
2N5401 Applications
Switching and amplification for general use
Applications for telephony
Application of high voltage
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