2SCR586D3TL1 Overview
DC current gain in this device equals 120 @ 500mA 3V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 100mA, 2A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SCR586D3TL1 Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 300mV @ 100mA, 2A
2SCR586D3TL1 Applications
There are a lot of ROHM Semiconductor 2SCR586D3TL1 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
