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FMMT493TA

FMMT493TA

FMMT493TA

Diodes Incorporated

FMMT493TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT493TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation500mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating1A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT493
Number of Elements 1
Voltage 100V
Element ConfigurationSingle
Current 1A
Power Dissipation500mW
Transistor Application SWITCHING
Gain Bandwidth Product150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 250mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage100V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage600mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Continuous Collector Current 1A
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:19282 items

Pricing & Ordering

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FMMT493TA Product Details

FMMT493TA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 250mA 10V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.For high efficiency, the continuous collector voltage must be kept at 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.The part has a transition frequency of 150MHz.There is a breakdown input voltage of 100V volts that it can take.When collector current reaches its maximum, it can reach 1A volts.

FMMT493TA Features


the DC current gain for this device is 100 @ 250mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz

FMMT493TA Applications


There are a lot of Diodes Incorporated FMMT493TA applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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