BC848BLT3G Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V allows for a high level of efficiency.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 100MHz.An input voltage of 30V volts is the breakdown voltage.During maximum operation, collector current can be as low as 100mA volts.
BC848BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848BLT3G Applications
There are a lot of ON Semiconductor BC848BLT3G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
