MMBTA05LT3G Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 4V, an efficient operation can be achieved.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 60V volts.A maximum collector current of 500mA volts can be achieved.
MMBTA05LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA05LT3G Applications
There are a lot of ON Semiconductor MMBTA05LT3G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
