UMT3906T106 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.The collector emitter saturation voltage is -400mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at -200mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.This device has a current rating of -200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.An input voltage of 40V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 200mA volts.
UMT3906T106 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
UMT3906T106 Applications
There are a lot of ROHM Semiconductor UMT3906T106 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
