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2SA1036KT146Q

2SA1036KT146Q

2SA1036KT146Q

ROHM Semiconductor

2SA1036KT146Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA1036KT146Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Contact PlatingCopper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -32V
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-500mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SA1036
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power - Max 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage32V
Transition Frequency 200MHz
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
hFE Min 82
Continuous Collector Current -500mA
VCEsat-Max 0.4 V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:18123 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.068400$0.0684
500$0.050294$25.147
1000$0.041912$41.912
2000$0.038451$76.902
5000$0.035936$179.68
10000$0.033429$334.29
15000$0.032329$484.935
50000$0.031789$1589.45

2SA1036KT146Q Product Details

2SA1036KT146Q Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 200MHz.Input voltage breakdown is available at 32V volts.During maximum operation, collector current can be as low as 500mA volts.

2SA1036KT146Q Features


the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz

2SA1036KT146Q Applications


There are a lot of ROHM Semiconductor 2SA1036KT146Q applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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