PMBT6428,215 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100μA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.A transition frequency of 100MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 50V volts.Collector current can be as low as 100mA volts at its maximum.
PMBT6428,215 Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMBT6428,215 Applications
There are a lot of Nexperia USA Inc. PMBT6428,215 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
