MMBT5771 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 10mA 300mV.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at -4.5V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -200mA.A transition frequency of 700MHz is present in the part.An input voltage of 15V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMBT5771 Features
the DC current gain for this device is 50 @ 10mA 300mV
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at -4.5V
the current rating of this device is -200mA
a transition frequency of 700MHz
MMBT5771 Applications
There are a lot of ON Semiconductor MMBT5771 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
