MPSW42RLRAG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor can be broken down at a voltage of 300V volts.A maximum collector current of 500mA volts can be achieved.
MPSW42RLRAG Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSW42RLRAG Applications
There are a lot of ON Semiconductor MPSW42RLRAG applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
