MMBTA56WT1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.As a result, the part has a transition frequency of 50MHz.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
MMBTA56WT1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
MMBTA56WT1 Applications
There are a lot of Rochester Electronics, LLC MMBTA56WT1 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
