MMBFJ176 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
MMBFJ176 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 12 hours ago)
Factory Lead Time
42 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.95
Voltage - Rated DC
-30V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
25mA
Base Part Number
MBFJ176
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
225mW
FET Type
P-Channel
Transistor Application
SWITCHING
Breakdown Voltage
30V
Drain to Source Voltage (Vdss)
30V
Continuous Drain Current (ID)
-25mA
Gate to Source Voltage (Vgs)
30V
FET Technology
JUNCTION
Drain to Source Resistance
250Ohm
Current - Drain (Idss) @ Vds (Vgs=0)
2mA @ 15V
Voltage - Cutoff (VGS off) @ Id
1V @ 10nA
Resistance - RDS(On)
250Ohm
Height
930μm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:11828 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MMBFJ176 Product Details
MMBFJ176 Description
MMBFJ176 P-Channel Switch was specifically designed to work with low-level analog switch chopper-stabilized amplifiers and sample-and-hold circuits. It can be used for general purposes and can be used in Industrial and Power Management.
MMBFJ176 Features
Interchangeable source and drain 30V Drain-gate voltage -30V Gate-source voltage 50mA Forward gate current
MMBFJ176 Applications
Industrial Power Management
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