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TF252TH-4-TL-H

  • TF252TH-4-TL-H - TF252TH-4-TL-H datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
  • TF252TH-4-TL-H - TF252TH-4-TL-H datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

TF252TH-4-TL-H

TF252TH-4-TL-H

ON Semiconductor

TF252TH-4-TL-H datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

TF252TH-4-TL-H Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e6
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
HTS Code8541.21.00.95
Max Power Dissipation100mW
Terminal Position DUAL
Base Part Number TF252
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Operating ModeDEPLETION MODE
FET Type N-Channel
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3.1pF @ 2V
Drain to Source Voltage (Vdss) 2V
Continuous Drain Current (ID) 1mA
Gate to Source Voltage (Vgs) -20V
Drain Current-Max (Abs) (ID) 0.001A
FET Technology JUNCTION
Current - Drain (Idss) @ Vds (Vgs=0) 140μA @ 2V
Voltage - Cutoff (VGS off) @ Id 100mV @ 1μA
Height 340μm
Length 1.4mm
Width 800μm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:219693 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.04000$0.04
500$0.0396$19.8
1000$0.0392$39.2
1500$0.0388$58.2
2000$0.0384$76.8
2500$0.038$95

TF252TH-4-TL-H Product Details

TF252TH-4-TL-H Features

High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)

Ultrasmall package facilitates miniaturization in end products

Best suited for use in electret condenser microphone for audio equipment and telephones

Excellent voltage characteristics

Excellent transient characteristics

Adoption of FBET process

Halogen free compliance



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