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PMBFJ620,115

  • PMBFJ620,115 - PMBFJ620,115 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website
  • PMBFJ620,115 - PMBFJ620,115 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

PMBFJ620,115

PMBFJ620,115

NXP USA Inc.

PMBFJ620,115 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

SOT-23

PMBFJ620,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface MountYES
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2001
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOW NOISE
HTS Code8541.21.00.75
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBFJ620
Pin Count6
JESD-30 Code R-PDSO-G6
Qualification StatusNot Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Operating ModeENHANCEMENT MODE
Power - Max 190mW
FET Type 2 N-Channel (Dual)
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V
DS Breakdown Voltage-Min 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.19W
Feedback Cap-Max (Crss) 2.5 pF
Current - Drain (Idss) @ Vds (Vgs=0) 24mA @ 10V
Voltage - Cutoff (VGS off) @ Id 2V @ 1μA
Voltage - Breakdown (V(BR)GSS) 25V
Resistance - RDS(On) 50Ohm
RoHS StatusROHS3 Compliant
In-Stock:27686 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$13.356560$13.35656
10$12.600528$126.00528
100$11.887291$1188.7291
500$11.214425$5607.2125
1000$10.579647$10579.647

PMBFJ620,115 Product Details

PMBFJ620,115 Description


A SOT363 package with two N-channel symmetrical junction field-effect transistors



PMBFJ620,115 Features


  • In a single package, there are two field effect transistors.

  • low volume

  • The ability to switch between drain and source connections

  • High profit.



PMBFJ620,115 Applications


  • Car radios' AM input stage

  • amplified VHF

  • Mixers and oscillators.


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