SMMBF4391LT1G datasheet pdf and Transistors - JFETs product details from Rochester Electronics, LLC stock available on our website
SOT-23
SMMBF4391LT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
225mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
14pF @ 15V VGS
Drain to Source Voltage (Vdss)
30V
Current - Drain (Idss) @ Vds (Vgs=0)
50mA @ 15V
Voltage - Cutoff (VGS off) @ Id
4V @ 10nA
Voltage - Breakdown (V(BR)GSS)
30V
Resistance - RDS(On)
30Ohms
RoHS Status
ROHS3 Compliant
In-Stock:29057 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.23000
$0.23
500
$0.2277
$113.85
1000
$0.2254
$225.4
1500
$0.2231
$334.65
2000
$0.2208
$441.6
2500
$0.2185
$546.25
SMMBF4391LT1G Product Details
The Rochester Electronics Transistors JFETs SMMBF4391LT1G is a small signal N-channel JFET designed for use in a variety of applications. It features a low gate-source capacitance of 0.2 pF, a low gate-drain capacitance of 0.2 pF, and a low gate-drain leakage current of 0.1 nA. It also has a low on-resistance of 0.2 ohms and a high breakdown voltage of 30 volts. This makes it ideal for use in high-frequency switching applications, such as in audio amplifiers, radio receivers, and other electronic circuits. Additionally, it is suitable for use in low-noise applications, such as in low-noise amplifiers and other sensitive circuits. The SMMBF4391LT1G is also RoHS compliant, making it a great choice for environmentally conscious applications.
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