MJD32CG Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 3MHz.A maximum collector current of 3A volts is possible.
MJD32CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CG Applications
There are a lot of ON Semiconductor MJD32CG applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
