2ST501T Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 2A 2V.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 350V volts before it breaks down.The product comes in the supplier device package of TO-220AB.Single BJT transistor shows a 350V maximal voltage - Collector EmSingle BJT transistorter Breakdown.A maximum collector current of 4A volts is possible.
2ST501T Features
the DC current gain for this device is 2000 @ 2A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2mA, 2A
the emitter base voltage is kept at 5V
the supplier device package of TO-220AB
2ST501T Applications
There are a lot of STMicroelectronics 2ST501T applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
