MJE702G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 30mA, 1.5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 1MHz is present in the part.Maximum collector currents can be below 4A volts.
MJE702G Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 1MHz
MJE702G Applications
There are a lot of ON Semiconductor MJE702G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
