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PBSS5350TVL

PBSS5350TVL

PBSS5350TVL

Nexperia USA Inc.

PBSS5350TVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5350TVL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
Part StatusActive
Number of Terminations 3
Terminal Position DUAL
Terminal FormGULL WING
Pin Count3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
JEDEC-95 Code TO-236AB
Vce Saturation (Max) @ Ib, Ic 390mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 2A
Transition Frequency 100MHz
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:78892 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.490000$0.49
10$0.462264$4.62264
100$0.436098$43.6098
500$0.411413$205.7065
1000$0.388126$388.126

PBSS5350TVL Product Details

PBSS5350TVL Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 390mV @ 300mA, 3A.In the part, the transition frequency is 100MHz.The device has a 50V maximal voltage - Collector Emitter Breakdown.

PBSS5350TVL Features


the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
a transition frequency of 100MHz

PBSS5350TVL Applications


There are a lot of Nexperia USA Inc. PBSS5350TVL applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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