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MJ15004G

MJ15004G

MJ15004G

ON Semiconductor

MJ15004G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJ15004G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface MountNO
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingTray
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -140V
Max Power Dissipation250W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating-20A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation250W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 20A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 5A 2V
Current - Collector Cutoff (Max) 250μA
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Collector Emitter Breakdown Voltage140V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 8.51mm
Length 39.37mm
Width 26.67mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:858 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.81000$6.81
10$6.15200$61.52
100$5.09320$509.32
500$4.43510$2217.55

MJ15004G Product Details

MJ15004G Overview


In this device, the DC current gain is 25 @ 5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 500mA, 5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -20A.Parts of this part have transition frequencies of 2MHz.When collector current reaches its maximum, it can reach 20A volts.

MJ15004G Features


the DC current gain for this device is 25 @ 5A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -20A
a transition frequency of 2MHz

MJ15004G Applications


There are a lot of ON Semiconductor MJ15004G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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