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BD239BTU

BD239BTU

BD239BTU

ON Semiconductor

BD239BTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD239BTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation30W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating2A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD239
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation30W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 90V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
Collector Emitter Breakdown Voltage80V
Collector Emitter Saturation Voltage700mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 15
Height 15.7mm
Length 9.9mm
Width 4.5mm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:28797 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.24000$0.24
500$0.2376$118.8
1000$0.2352$235.2
1500$0.2328$349.2
2000$0.2304$460.8
2500$0.228$570

BD239BTU Product Details

BD239BTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 1A 4V.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 200mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The maximum collector current is 2A volts.

BD239BTU Features


the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A

BD239BTU Applications


There are a lot of ON Semiconductor BD239BTU applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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