BF721T1G Overview
In this device, the DC current gain is 50 @ 25mA 20V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -800mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 5V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 60MHz is present in the part.Breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
BF721T1G Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 60MHz
BF721T1G Applications
There are a lot of ON Semiconductor BF721T1G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
