PMBTA06,235 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 4V to gain high efficiency.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 80V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
PMBTA06,235 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
PMBTA06,235 Applications
There are a lot of Nexperia USA Inc. PMBTA06,235 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
