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MGSF1N02LT1G

MGSF1N02LT1G

MGSF1N02LT1G

ON Semiconductor

MGSF1N02LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

MGSF1N02LT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 hours ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 90MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating750mA
Pin Count3
Number of Elements 1
Power Dissipation-Max 400mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation400mW
Turn On Delay Time2.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 5V
Current - Continuous Drain (Id) @ 25°C 750mA Ta
Rise Time1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 750mA
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.75A
Drain to Source Breakdown Voltage 20V
Nominal Vgs 1.7 V
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14872 items

Pricing & Ordering

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MGSF1N02LT1G Product Details

MGSF1N02LT1G Description


MGSF1N02LT1G is a type of N-channel power MOSFET developed by ON Semiconductor and optimized for minimal power loss and conservation energy. It is able to provide low RDS(on) and superior switching performance. MGSF1N02LT1G is specifically designed for use in space-sensitive power management circuitry.



MGSF1N02LT1G Features


  • low RDS(on)

  • Low gate charge

  • Improved dv/dt capability

  • Superior switching performance

  • Available in the SOT-23 package



MGSF1N02LT1G Applications


  • Computers

  • Printers

  • PCMCIA

  • Cards, cellular and cordless telephones


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