TK65A10N1,S4X Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5400pF @ 50V.This device conducts a continuous drain current (ID) of 65A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 296A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 44 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
TK65A10N1,S4X Features
a continuous drain current (ID) of 65A
the turn-off delay time is 85 ns
based on its rated peak drain current 296A.
a 100V drain to source voltage (Vdss)
TK65A10N1,S4X Applications
There are a lot of Toshiba Semiconductor and Storage
TK65A10N1,S4X applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
