Name: STS10N3LH5
Brand: STMicroelectronics
SKU: STS10N3LH5
Price: 1.48000 USD
Availability: InStock

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STS10N3LH5

Manufacturer part number:STS10N3LH5

Manufacturer:STMicroelectronics

Description:STS10N3LH5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STS10N3LH5 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	NRND (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ V
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STS10
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	21m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	475pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 5V
Rise Time	22ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±22V
Fall Time (Typ)	2.8 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	22V
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	50 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STS10N3LH5 Product Details

STS10N3LH5 Description

STS10N3LH5 belongs to the family of STripFET?V power MOSFETs provided by STMicroelectronics. Based on the STripFET?V technology, it is able to provide extremely low on-resistance RDS(on), low switching gate charge, high avalanche ruggedness, and low gate drive power losses, which makes it well suited for a wide variety of applications.