Description
The IPB200N25N3GATMA1 is an N-channel Power MOSFET based on the OptiMOSTM industry-leading benchmark technology. It's ideal for 48V systems, DC-to-DC converters, uninterruptible power supply (UPS), and inverters that require synchronous rectification. N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a type of field-effect transistor that belongs to the field-effect transistors category (FET). The capacitor is used to power MOSFET transistors. An insulated-gate field-effect transistor is another name for this type of transistor (IGFET).
Features
? Normal level N-channel
? The gate charge x R DS(on) product is excellent (FOM)
? R DS on-resistance is extremely low (on)
? Operating temperature of 175 °C
? Lead plating free of pb; RoHS compliance
? JEDEC1) qualified for the intended application
? IEC61249-2-21 certified halogen-free
? Suitable for synchronous rectification and high-frequency switching
Applications
? Power Management
? Motor Drive & Control
? Industrial, Lighting
? Audio
? Circuit
