MCH6101-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -180mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 180mV @ 15mA, 750mA.Emitter base voltages of 5V can achieve high levels of efficiency.Single BJT transistor can take a breakdown input voltage of 15V volts.When collector current reaches its maximum, it can reach 1.5A volts.
MCH6101-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 180mV @ 15mA, 750mA
the emitter base voltage is kept at 5V
MCH6101-TL-E Applications
There are a lot of ON Semiconductor MCH6101-TL-E applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
