KSD794AYSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 500mA 5V.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 150mA, 1.5A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
KSD794AYSTU Features
the DC current gain for this device is 160 @ 500mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 2V @ 150mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
KSD794AYSTU Applications
There are a lot of ON Semiconductor KSD794AYSTU applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
