NJVMJD122T4G-VF01 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 4A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 8A, 80mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
NJVMJD122T4G-VF01 Features
the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 4V @ 8A, 80mA
NJVMJD122T4G-VF01 Applications
There are a lot of ON Semiconductor NJVMJD122T4G-VF01 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
