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KSD73O

KSD73O

KSD73O

ON Semiconductor

KSD73O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD73O Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD73
Power - Max 30W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1A 10V
Current - Collector Cutoff (Max) 5mA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 20MHz
In-Stock:4390 items

KSD73O Product Details

KSD73O Overview


In this device, the DC current gain is 70 @ 1A 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).This device displays a 60V maximum voltage - Collector Emitter Breakdown.

KSD73O Features


the DC current gain for this device is 70 @ 1A 10V
the vce saturation(Max) is 2V @ 500mA, 5A

KSD73O Applications


There are a lot of ON Semiconductor KSD73O applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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