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2SD2206(TE6,F,M)

2SD2206(TE6,F,M)

2SD2206(TE6,F,M)

Toshiba Semiconductor and Storage

Trans Darlington NPN 100V 2A 3-Pin TO-92 Mod T/R

SOT-23

2SD2206(TE6,F,M) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Number of Pins 3
Operating Temperature150°C TJ
PackagingBulk
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Element ConfigurationSingle
Power - Max 900mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Current - Collector (Ic) (Max) 2A
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 100V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1229 items

About 2SD2206(TE6,F,M)

The 2SD2206(TE6,F,M) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans Darlington NPN 100V 2A 3-Pin TO-92 Mod T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2SD2206(TE6,F,M), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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