IRL530A Description
Power MOSFETIRL530A is a special type of metal oxide semiconductor field effect transistor. It is specially designed to deal with high-level power. The power MOSFET adopts V configuration structure.
IRL530A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.101Ω (Typ.)
IRL530A Applications
high-level power
