Name: STW8NB100
Brand: STMicroelectronics
SKU: STW8NB100
Availability: InStock

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STW8NB100

Manufacturer part number:STW8NB100

Manufacturer:STMicroelectronics

Description:STW8NB100 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW8NB100 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	7.3A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STW8N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.45 Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.3A Tc
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	32 ns
Continuous Drain Current (ID)	7.3A
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	29.2A
Avalanche Energy Rating (Eas)	700 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

STW8NB100 Product Details

STW8NB100 Description

STMicroelectronics has developed a sophisticated series of power MOSFETs with exceptional performances using the most recent high voltage MESH OVERLAYTM technology. The combination of the novel, patent-pending strip layout and the proprietary edge termination structure used by the company results in the lowest RDS(on) per area, remarkable avalanche and dv/dt capabilities, and unmatched gate charge and switching characteristics.