IRF530 Description
The IRF530 is an N-channel MOSFET that is intended for high-speed and high-power applications. It can withstand 14 A of continuous current and 100 V of voltage. It can drive a load of up to 56 A in pulse mode. Other transistors in this series with somewhat different specs are available, such as IRF531, IRF532, and IRF533.
IRF530 Features
Dynamic dv/dt rating
Fast switching
Ease of paralleling
The required simple drive circuit
Repetitive avalanche rated
Maximum Drain-to-source voltage VDS: 100V
Maximum continuous drain current ID: 14A
Pulse drain current: 56A
Maximum power dissipation: 88W
Maximum gate-to-source voltage: ±20V
Peak diode recovery dv/dt: 5.5V/ns
On-state resistance: 0.16Ω
Total gate charge Qg: 26nC
Operating junction and storage temperature range: -55?C to +175?C
Package: TO-220AB
Transistor Polarity: N-channel
IRF530 Applications
Battery management system and battery chargers
Motor drives
Solar power supply applications
UPS
DC-DC and DC-AC Converters
Regulators
Audio amplifier
Solenoid and relay drivers
