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FDPF4N60NZ

FDPF4N60NZ

FDPF4N60NZ

ON Semiconductor

N-Channel Tube 2.5 Ω @ 1.9A, 10V ±25V 510pF @ 25V 10.8nC @ 10V TO-220-3 Full Pack

SOT-23

FDPF4N60NZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 7 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series UniFET-II™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Number of Elements 1
Power Dissipation-Max 28W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation28W
Case Connection ISOLATED
Turn On Delay Time12.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.8A Tc
Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 10V
Rise Time15.1ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 12.8 ns
Turn-Off Delay Time 30.2 ns
Continuous Drain Current (ID) 3.8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Height 16.07mm
Length 10.36mm
Width 4.9mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:5077 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.27000$1.27
10$1.12600$11.26
100$0.89560$89.56
500$0.70108$350.54

FDPF4N60NZ Product Details

FDPF4N60NZ Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 510pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 30.2 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12.7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.In addition to reducing power consumption, this device uses drive voltage (10V).

FDPF4N60NZ Features


a continuous drain current (ID) of 3.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30.2 ns


FDPF4N60NZ Applications


There are a lot of ON Semiconductor
FDPF4N60NZ applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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