Description
The FQP27P06 is a MOSFET with a P-Channel QFET?. ON Semiconductor's unique planar stripe and DMOS technology were used to create this P-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to reduce on-state resistance, improve switching performance, and provide strong avalanche energy strength. These devices can be used in applications such as switched-mode power supply, audio amplifiers, DC motor control, and variable switching power.
Features
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
- 27 A, - 60 V, RDS(on) = 70 m? (Max.) @ VGS = - 10 V, ID = - 13.5 A
Low Gate Charge (Typ. 33 nC)
Low Crss (Typ. 120 pF)
Applications
