SCTW35N65G2VAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
SCTW35N65G2VAG Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~200°C TJ
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
SiCFET (Silicon Carbide)
Reach Compliance Code
compliant
Power Dissipation-Max
240W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
67m Ω @ 20A, 20V
Vgs(th) (Max) @ Id
5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1370pF @ 400V
Current - Continuous Drain (Id) @ 25°C
45A Tc
Gate Charge (Qg) (Max) @ Vgs
73nC @ 20V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
18V 20V
Vgs (Max)
+22V, -10V
In-Stock:435 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$20.40000
$20.4
500
$20.196
$10098
1000
$19.992
$19992
1500
$19.788
$29682
2000
$19.584
$39168
2500
$19.38
$48450
SCTW35N65G2VAG Product Details
SCTW35N65G2VAG Description
ST's superior and revolutionary 2nd generation SiC MOSFET technology was used to build the SCTW35N65G2VAG silicon carbide Power MOSFET, which has a surprisingly low on-resistance per unit area and very strong switching performance.
SCTW35N65G2VAG Features
The very fast and robust intrinsic body diode
Low capacitance
AEC-Q101 qualified
SCTW35N65G2VAG Applications
Switching mode power supply
EV chargers
DC-DC converters
Related Products
Similar Transistors - FETs, MOSFETs - Single from STMicroelectronics and other manufacturers
