STB13N60M2 Description
The MDmeshTM M2 technology was used to build the STB13N60M2 N-channel Power MOSFETs. These devices have low on-resistance and optimal switching characteristics due to their strip layout and improved vertical structure, making them suited for the most demanding high-efficiency converters.
STB13N60M2 Features
? The gate charge is really low.
? Outstanding output capacitance profile (COSS)
? Avalanche-proofed to the nth degree
? Zener-secured
STB13N60M2 Applications
Switching applications
