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IXTT69N30P

IXTT69N30P

IXTT69N30P

IXYS

Trans MOSFET N-CH 300V 69A 3-Pin(2+Tab) TO-268

SOT-23

IXTT69N30P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2006
Series PolarHT™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 500W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation500W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4960pF @ 25V
Current - Continuous Drain (Id) @ 25°C 69A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 69A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.049Ohm
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 1500 mJ
RoHS StatusROHS3 Compliant
In-Stock:763 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.433964$1.433964
10$1.352797$13.52797
100$1.276223$127.6223
500$1.203984$601.992
1000$1.135834$1135.834

About IXTT69N30P

The IXTT69N30P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 300V 69A 3-Pin(2+Tab) TO-268.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTT69N30P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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