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FQD4N50TM_WS

FQD4N50TM_WS

FQD4N50TM_WS

ON Semiconductor

MOSFET N-CH 500V 2.6A DPAK

SOT-23

FQD4N50TM_WS Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2000
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 45W Tc
Element ConfigurationSingle
Power Dissipation2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.7 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 2.6A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
RoHS StatusRoHS Compliant
In-Stock:2371 items

About FQD4N50TM_WS

The FQD4N50TM_WS from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 500V 2.6A DPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQD4N50TM_WS, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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