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IPD60R600CPATMA1

IPD60R600CPATMA1

IPD60R600CPATMA1

Infineon Technologies

MOSFET N-CH 600V 6.1A TO-252

SOT-23

IPD60R600CPATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
Series CoolMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 60W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 220μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.1A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:3548 items

About IPD60R600CPATMA1

The IPD60R600CPATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 600V 6.1A TO-252.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPD60R600CPATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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