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NTP18N06

NTP18N06

NTP18N06

ON Semiconductor

NTP18N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTP18N06 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2005
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn80Pb20)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating15A
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 48.4W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation48.4W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 15A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.09Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 45A
Avalanche Energy Rating (Eas) 61 mJ
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1772 items

NTP18N06 Product Details

NTP18N06 Description


NTP18N06 is a 60v N?Channel Power MOSFET. The onsemi NTP18N06 is designed for low voltage, high-speed switching applications in power supplies, converters and power motor controls, and bridge circuits. The operating junction and storage temperature are between -55 and 175℃. The MOSFET NTP18N06 is in the TO-220-3 package with 48.4W power dissipation.



NTP18N06 Features


  • Pb?Free Packages are Available

  • Drain to source voltage (Vds) of 60V

  • Gate to source voltage of ±20V

  • Continuous drain current (Id) of 15A

  • Power dissipation (Pd) of 48.4W

  • Operating junction temperature range from -55°C to 175°C



NTP18N06 Applications


  • Power Supplies

  • Converters

  • Power Motor Controls

  • Bridge Circuits


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