Name: STP14NK60Z
Brand: STMicroelectronics
SKU: STP14NK60Z
Availability: InStock

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STP14NK60Z

Manufacturer part number:STP14NK60Z

Manufacturer:STMicroelectronics

Description:STP14NK60Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP14NK60Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	13.5A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STP14N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	160W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	160W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	500m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	2220pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13.5A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	13.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.5Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	54A
Avalanche Energy Rating (Eas)	300 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP14NK60Z Product Details

STP14NK60Z Description

The STP14NK60Z is a SuperMESH? N-channel Power MOSFET offering Zener protection and minimized gate charge. This Power MOSFET STP14NK60Z was developed using STMicroelectronics' SuperMESH? technology, achieved through optimization of ST's well-established strip-based PowerMESH? layout. In addition to a significant reduction in ON resistance, this STP14NK60Z is designed to ensure a high level of dV/dt capability for the most demanding applications.