Name: FQD16N25CTM
Brand: ON Semiconductor
SKU: FQD16N25CTM
Price: 1.25000 USD
Availability: InStock

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FQD16N25CTM

Manufacturer part number:FQD16N25CTM

Manufacturer:ON Semiconductor

Description:FQD16N25CTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQD16N25CTM Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	270mOhm
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	250V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	16A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	160W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	160W
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	270m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1080pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	53.5nC @ 10V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	105 ns
Turn-Off Delay Time	135 ns
Continuous Drain Current (ID)	16A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Pulsed Drain Current-Max (IDM)	64A
Nominal Vgs	4 V
Height	2.3mm
Length	6.6mm
Width	6.1mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FQD16N25CTM Product Details

FQD16N25CTM Description

The FQD16N25CTM is a QFET? N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET FQD16N25CTM has been specially tailored to reduce ON-state resistance, and provide superior switching performance and high avalanche energy strength. The onsemi FQD16N25CTM is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.