Name: SCT50N120
Brand: STMicroelectronics
SKU: SCT50N120
Price: 41.62000 USD
Availability: InStock

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SCT50N120

Manufacturer part number:SCT50N120

Manufacturer:STMicroelectronics

Description:SiCFET (Silicon Carbide) N-Channel Tube 69m Ω @ 40A, 20V +25V, -10V 1900pF @ 400V 122nC @ 20V 1200V TO-247-3

Case Package:SOT-23

Datasheet:SCT50N120 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Manufacturer Package Identifier	HiP247-8396756
Operating Temperature	-55°C~200°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	SiCFET (Silicon Carbide)
Base Part Number	SCT50
Number of Channels	1
Power Dissipation-Max	318W Tc
Power Dissipation	318W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	69m Ω @ 40A, 20V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 400V
Current - Continuous Drain (Id) @ 25°C	65A Tc
Gate Charge (Qg) (Max) @ Vgs	122nC @ 20V
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	+25V, -10V
Continuous Drain Current (ID)	65A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	25V
Max Junction Temperature (Tj)	200°C
Height	24.45mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

SCT50N120 Product Details

SCT50N120 Description

SCT50N120 MOSFET is built on well-established silicon processes that supply designers with an array of devices. SCT50N120 Power MOSFET has an excellent switching performance almost independent of temperature. STMicroelectronics SCT50N120 is utilized in high-efficiency and high power density applications.