IAUC90N10S5N062ATMA1

IAUC90N10S5N062ATMA1 Description

IAUC90N10S5N062ATMA1 developed by Infineon Technologies is a type of MOSFET which is a field-effect transistor that uses the effect of electric field to control the semiconductor (S) through the gate of the metal layer (M) through the oxide layer (O). Its characteristic is to use the gate voltage to control the drain current. Its input terminal is connected to a high level or a low level (usually a high level), and a voltage drop Vce will be generated when the current Ib flows through the MOSFET. The size of this voltage drop is determined by the forward conduction angle of the P-type and N-type diodes. size to decide.

IAUC90N10S5N062ATMA1 Features

Fast switching speed

Ultra-low gate impedance

Low power consumption

Strong driving ability

Full characterized avalanche voltage and current

IAUC90N10S5N062ATMA1 Applications

Analog circuits

Digital circuits